new product v10p45 www.vishay.com vishay general semiconductor revision: 07-sep-11 1 document number: 89340 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high current density surface mount trench mos barrier schottky rectifier ultra low v f = 0.34 v at i f = 5 a features ? very low profile - typical height of 1.1 mm ? ideal for automated placement ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition typical applications for use in low voltage high frequency dc/dc converters, freewheeling, and polarity protection applications. mechanical data case: to-277a (smpc) molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 2 01 class 1a whisker test notes (1) mounted on 30 mm x 30 mm pad areas al uminum pcb (2) free air, mounted on re commended copper pad area primary characteristics i f(av) 10 a v rrm 45 v i fsm 180 a v f at i f = 10 a 0.41 v t j max. 150 c k 2 1 to-277a ( s mpc) tmb s ? e s mp ? s eries anode 1 anode 2 cathode k maximum ratings (t a = 25 c unless otherwise noted) parameter symbol v10p45 unit device marking code v1045 maximum repetitive pe ak reverse voltage v rrm 45 v maximum dc forward current i f (1) 10 a i f (2) 4.4 peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 180 a operating junction and storage temperature range t j , t stg - 40 to + 150 c
new product v10p45 www.vishay.com vishay general semiconductor revision: 07-sep-11 2 document number: 89340 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms notes (1) free air, mounted on recommended copper pad area; thermal resistance r ? ja - junction to ambient (2) mounted on 30 mm x 30 mm alumi num pcb; thermal resistance r ? jm - junction to mount ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve notes (1) mounted on 30 mm x 30 mm aluminum pcb; t m measured at the terminal of cathode band (r ? jm = 4 c/w) (2) free air, mounted on recommended copper pad area (r ? ja = 75 c/w) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditi ons symbol typ. max. unit instantaneous forward voltage i f = 5.0 a t a = 25 c v f (1) 0.42 - v i f = 10 a 0.48 0.57 i f = 5.0 a t a = 125 c 0.34 - i f = 10 a 0.41 0.50 reverse current v r = 45 v t a = 25 c i r (2) 21 800 a t a = 125 c 9 35 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol v10p45 unit typical thermal resistance r ? ja (1) 75 c/w r ? jm (2) 4 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode v10p45-m3/86a 0.10 86a 1500 7" diam eter plastic tape and reel v10p45-m3/87a 0.10 87a 6500 13" diam eter plastic tape and reel t m - mount temperature (c) 12 4 0 0 75 150 dc forward current (a) 25 100 50 125 8 2 t m = 121 c (1) 6 10 t a = 25 c (2)
new product v10p45 www.vishay.com vishay general semiconductor revision: 07-sep-11 3 document number: 89340 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 2 - forward power loss characteristics fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical junction capacitance fig. 6 - typical tran sient thermal impedance d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 1.0 average forward current (a) 7 6 0 0612 average power loss (w) 410 1 4 d = t p /t t p t 5 d = 0.8 3 8 2 2 t a = 150 c t a = 125 c t a = 25 c instantaneous forward voltage (v) 100 0.1 00.7 instantaneous forward current (a) 0.1 0.5 1 0.2 t a = 100 c 10 0.3 0.4 0.6 percent of rated peak reverse voltage (%) 100 0.001 20 40 100 instantaneous reverse current (a) 50 1 30 60 10 90 70 0.1 0.01 80 t a = 150 c t a = 125 c t a = 25 c t a = 100 c 10 000 100 junction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p reverse voltage (v) 0.1 100 110 1000 t - pulse duration (s) 100 1 0.01 10 100 transient thermal impedance (c/w) 0.1 1 10 junction to ambient
new product v10p45 www.vishay.com vishay general semiconductor revision: 07-sep-11 4 document number: 89340 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) conform to jedec to-277a to-277a ( s mpc) 0.016 (0.40) 0.006 (0.15) 0.047 (1.20) 0.039 (1.00) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) 0.173 (4.40) 0.049 (1.24) 0.037 (0.94) 0.053 (1.35) 0.041 (1.05) 0.030 (0.75) nom. 0.084 (2.13) nom. 0.155 (3.94) nom. mountin g pa d layout 0.268 (6.80) 0.186 (4.72) min. 0.050 (1.27) min. 0.041 (1.04) 0.055 (1.40) min. 0.189 (4.80) min. 0.187 (4.75) 0.175 (4.45) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.171 (4.35) 0.167 (4.25) k 2 1
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